STB19NB20中文资料意法半导体数据手册PDF规格书
STB19NB20规格书详情
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performance. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
■ TYPICAL RDS(on) = 0.150 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100 AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
产品属性
- 型号：
STB19NB20
- 功能描述：
MOSFET N-Ch 200 Volt 19 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
25+ |
TO-263 |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST/意法 |
22+ |
TO-263 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
ST/意法 |
24+ |
TO-263 |
504153 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
ST |
25+ |
TO-263 |
37650 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
ST |
2025+ |
TO-263-2 |
5425 |
全新原厂原装产品、公司现货销售 |
询价 | ||
ST |
24+ |
TO-263 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
询价 | ||
ST |
25+23+ |
TO-263 |
14705 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST/意法 |
2223+ |
TO-263 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
ST |
23+ |
TO-263 |
4500 |
全新原装、诚信经营、公司现货销售! |
询价 | ||
ST/意法 |
24+ |
TO-263 |
485 |
只做原厂渠道 可追溯货源 |
询价 |
