N-CHANNEL CLAMPED - 7 mohm - 80A TO-220/D2PAK/TO-247 FULLY PROTECTED MESH OVERLAY MOSFET

文件：327.67 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel clamped - 7 mOHM - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay TM MOSFET

文件：382.54 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel clamped - 7 mOHM - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay TM MOSFET

文件：382.54 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL CLAMPED - 7 mohm - 80A TO-220/D2PAK/TO-247 FULLY PROTECTED MESH OVERLAY MOSFET

文件：327.67 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade N-channel clamped 7 mOhm, 80 A fully protected Mesh Overlay Power MOSFET in a I2PAK package

This fully clamped MOSFET is produced using ST’s latest advanced Mesh overlay process, which is based on an innovative strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions, • Designed for automotive applications and AEC-Q101 qualified\n• 100% avalanche tested• Low capacitance and gate charge\n• 175°C maximum junction temperature;

ST

意法半导体

MOSFET N-CH 33V 80A D2PAK

ST

意法半导体