isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 10mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：349.26 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：120N10F4；Package：D2PAK；N-channel 100 V, 8 m廓 typ., 120 A, STripFET??DeepGATE?? Power MOSFETs in D2PAK and TO-220 packages

文件：949.58 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 100 V, 8 mOhm typ., 120 A STripFET(TM) DeepGATE(TM) Power MOSFET in D2PAK package

These devices are N-channel Power MOSFETs developed using ST’s STripFET™ DeepGATE™ technology. The devices have a new gate structure and are specially designed to minimize on-state resistance to provide superior switching performance. N-channel enhancement mode\nVery low on-resistance\nLow gate charge\n100% avalanche rated;

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 10mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.85 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 100 V, 8 m廓 typ., 120 A, STripFET??DeepGATE?? Power MOSFETs in D2PAK and TO-220 packages

文件：949.58 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体