STB1277

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES ●Audiopoweramplifier ●Highcurrentapplication ●Highcurrent:IC=-2A ●ComplementarypairwithSTD1862

STB1277

PNP Silicon Transistor

Description •Audiopoweramplifier •Highcurrentapplication Features •Highcurrent:IC=-2A •ComplementarypairwithSTD1862

STB1277

PNP Plastic Encapsulated Transistor

FEATURES ●GeneralPurposeSwitchingandAmplification. ●HighTotalPowerDissipation. ●HighhFEandGoodLinearity

STB1277

TO-92 Plastic-Encapsulate Transistors

FEATURES Audiopoweramplifier Highcurrentapplication Highcurrent:IC=-2A ComplementarypairwithSTD1862

STB1277L

PNP Silicon Transistor

Description •Audiopoweramplifier •Highcurrentapplication Features •Highcurrent:IC=-2A •ComplementarypairwithSTD1862L

STB1277L

PNP Silicon Transistor

Description •Audiopoweramplifier •Highcurrentapplication Features •Highcurrent:IC=-2A •ComplementarypairwithSTD1862L

STB1277-O

PNP Plastic Encapsulated Transistor

FEATURES ●GeneralPurposeSwitchingandAmplification. ●HighTotalPowerDissipation. ●HighhFEandGoodLinearity

STB1277-TA

TO-92 Plastic-Encapsulate Transistors

FEATURES Audiopoweramplifier Highcurrentapplication Highcurrent:IC=-2A ComplementarypairwithSTD1862

STB1277-Y

PNP Plastic Encapsulated Transistor

FEATURES ●GeneralPurposeSwitchingandAmplification. ●HighTotalPowerDissipation. ●HighhFEandGoodLinearity

STB12N60DM2AG

Automotive-grade N-channel 600 V, 380 m typ., 10 A MDmesh DM2 Power MOSFET in a D²PAK package

Features •AEC-Q101qualified •Fast-recoverybodydiode •Extremelylowgatechargeandinputcapacitance •Lowon-resistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM2fastre

STB12NK80Z

N-CHANNEL 800V - 0.65 OHM - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET

Description ThesedevicesareN-channelZener-protectedPowerMOSFETsdevelopedusingSTMicroelectronicsSuperMESH™technology,achievedthroughoptimizationofSTswellestablishedstrip-basedPowerMESH™layout.Inadditiontoasignificantreductioninonresistance,thisdeviceisdesignedtoe

STB12NK80Z

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainCurrent:ID=10.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·motordrive,

STB12NK80Z

N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH?줡ower MOSFET

N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH™PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS

STB12NK80Z

N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH?줡ower MOSFET

N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH™PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS

STB12NK80Z

N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH?줡ower MOSFET

N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH™PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS

STB12NK80Z_V01

N-channel 800 V, 0.65Ω typ., 10.5 A Zener-protected SuperMESH™ Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247

Features ■Extremelyhighdv/dtcapability ■Improvedesdcapability ■100avalanchetested ■Gatechargeminimized ■Verylowintrinsiccapacitances ■Verygoodmanufacturingreliability Applications ■Switchingapplications Description ThesedevicesareN-channelZener-protected Pow

STB12NK80ZT4

N-CHANNEL 800V - 0.65 OHM - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET

Description ThesedevicesareN-channelZener-protectedPowerMOSFETsdevelopedusingSTMicroelectronicsSuperMESH™technology,achievedthroughoptimizationofSTswellestablishedstrip-basedPowerMESH™layout.Inadditiontoasignificantreductioninonresistance,thisdeviceisdesignedtoe

STB12NM50

N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??Power MOSFET with FAST DIODE

Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. Generalfeatures ■100avalanchetested ■Highdv/dta

STB12NM50

N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

Description TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoptionof

STB12NM50-1

N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

Description TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoptionof