STB100N10F7资料使用说明书供应价格-114ic电子网

首页 >STB>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
STB100N10F7	文件：652.33 Kbytes Page：28 Pages	N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description TheseN-channelPowerMOSFETsutilizeSTripFET™F7technologywithan enhancedtrenc	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB100N10F7_V01	文件：652.33 Kbytes Page：28 Pages	N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description TheseN-channelPowerMOSFETsutilizeSTripFET™F7technologywithan enhancedtrenc	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB100NF03L-03	文件：393.28 Kbytes Page：11 Pages	N-CHANNEL 30V - 0.0026 W -100A D짼PAK/I짼PAK/TO-220 STripFET??II POWER MOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkab	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB100NF03L-03-01	文件：393.28 Kbytes Page：11 Pages	N-CHANNEL 30V - 0.0026 W -100A D짼PAK/I짼PAK/TO-220 STripFET??II POWER MOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkab	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB100NF04	文件：584.86 Kbytes Page：15 Pages	N-CHANNEL 40V - 0.0043ohm - 120A TO-220/D2PAK/I2PAK STripFET??II POWER MOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearema	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB100NF04-1	文件：584.86 Kbytes Page：15 Pages	N-CHANNEL 40V - 0.0043ohm - 120A TO-220/D2PAK/I2PAK STripFET??II POWER MOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearema	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB100NF04L	文件：338.42 Kbytes Page：9 Pages	N-CHANNEL 40V - 0.0036 W - 100A D2PAK STripFET??II POWER MOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarka	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB100NF04T4	文件：1.044109 Mbytes Page：9 Pages	N-Channel 40 V (D-S) MOSFET FEATURES •ThunderFET®powerMOSFET •Maximum175°Cjunctiontemperature •100RgandUIStested •Materialcategorization:fordefinitionsofcompliancepleasesee	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
STB100NF04T4	文件：1.12529 Mbytes Page：20 Pages	AEC-Q101 qualified DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearema	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB100NH02L	文件：409.97 Kbytes Page：13 Pages	N-CHANNEL 24V - 0.0052ohm - 60A D2PAK STripFET TM III POWER MOSFET Description TheSTB100NH02LutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitablefotthemostdemandingDC-DCconverterapplicationswherehighefficiencyistobeachieved. Generalfeatures ■RDS(ON)*Qgindustry’sbenchmark ■Conductionlosses	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB100NH02LT4	文件：409.97 Kbytes Page：13 Pages	N-CHANNEL 24V - 0.0052ohm - 60A D2PAK STripFET TM III POWER MOSFET Description TheSTB100NH02LutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitablefotthemostdemandingDC-DCconverterapplicationswherehighefficiencyistobeachieved. Generalfeatures ■RDS(ON)*Qgindustry’sbenchmark ■Conductionlosses	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB10100	文件：442.31 Kbytes Page：7 Pages	SCHOTTKY RECTIFIER Features 150CTJoperation Centertapconfiguration Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability 	SMCDIODESMC Diode Solutions 桑德斯微电子器件（南京）有限公司	SMCDIODE
STB10100C	文件：964.01 Kbytes Page：7 Pages	SCHOTTKY RECTIFIER Features 150CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnol	SMCDIODESMC Diode Solutions 桑德斯微电子器件（南京）有限公司	SMCDIODE
STB10120	文件：441.41 Kbytes Page：7 Pages	SCHOTTKY RECTIFIER Features 150CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnol	SMCDIODESMC Diode Solutions 桑德斯微电子器件（南京）有限公司	SMCDIODE
STB10120C	文件：347.34 Kbytes Page：6 Pages	SCHOTTKY RECTIFIER Features 150CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnol	SMCDIODESMC Diode Solutions 桑德斯微电子器件（南京）有限公司	SMCDIODE
STB10150	文件：443.44 Kbytes Page：7 Pages	SCHOTTKY RECTIFIER Features 150CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnol	SMCDIODESMC Diode Solutions 桑德斯微电子器件（南京）有限公司	SMCDIODE
STB10150C	文件：413.96 Kbytes Page：7 Pages	SCHOTTKY RECTIFIER Features 150CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnol	SMCDIODESMC Diode Solutions 桑德斯微电子器件（南京）有限公司	SMCDIODE
STB1017PI	文件：333.77 Kbytes Page：6 Pages	PNP Silicon Transistor Features •Lowsaturationswitchingapplication •Poweramplifier •HighVoltage:VCEO=-80VMin. •ComplementtoSTD1408PI	KODENSHIKodenshi Group 可天士可天士光电子集团	KODENSHI
STB1060	文件：443.75 Kbytes Page：7 Pages	SCHOTTKY RECTIFIER Features 150'CTJoperation Centertapconfiguration Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability 	SMCDIODESMC Diode Solutions 桑德斯微电子器件（南京）有限公司	SMCDIODE
STB1060C	文件：346.78 Kbytes Page：6 Pages	SCHOTTKY RECTIFIER Features 150CTJoperation Centertapconfiguration Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability 	SMCDIODESMC Diode Solutions 桑德斯微电子器件（南京）有限公司	SMCDIODE

12 3 4 5 6 >>>

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	STB100N10F7	STMicroelectronics	23+	D2PAK(TO-263)	30000	晶体管-分立半导体产品-原装正品	询价
深圳市华来深电子有限公司	STB100N10F7	ST	23+	SOT-263	8951	长期有货,代理库存,价格优惠,欢迎来电咨询。	询价
深圳和润天下电子科技有限公司	STB100N10F7	ST/意法半导体	22+	TO-263-3	6001	原装正品现货可开增值税发票	询价
深圳市高捷芯城科技有限公司	STB100N10F7	ST(意法半导体)	23+	TO-263-3	8498	支持大陆交货,美金交易。原装现货库存。	询价
深圳市达恩科技有限公司	STB100N10F7	STMicroelectronics	18+	NA	3357	进口原装正品优势供应QQ3171516190	询价
深圳市正迈科技有限公司	STB100N10F7	ST	23+	NA	19587	专业电子元器件供应链正迈科技特价代理QQ1304306553	询价
深圳诚思涵科技有限公司	STB100N10F7	ST	18+	TO263	85600	保证进口原装可开17%增值税发票	询价
深圳市百视威讯电子科技有限公司	STB100N10F7		23+	N/A	46080	正品授权货源可靠	询价
深圳市宏捷佳电子科技有限公司	STB100N10F7	ST	23+	TO-263	37650	全新原装真实库存含13点增值税票!	询价
深圳市新力诚科技有限公司	STB100N10F7	ST	2020+	TO-263	53080	公司代理品牌,原装现货超低价清仓!	询价

更多STB供应商更新时间2024-5-15 14:13:00

相关规格书

相关库存