STAV58016P2规格书供应商报价远创达-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
STAV58016P2	文件：1.14307 Mbytes Page：6 Pages	Gallium Nitride 50V, 16W, DC-6GHz RF Power Transistor Description The STAV58016P2 is a 16 watt, unmatched GaN HEMT, ideal for general applications up to 6GHz It features high gain, wide band and low cost, in 4*4.5mm DFN plastic package. It can support CW, pulse or any modulated signal. There is no guarantee of performance when this part is used o 文件：1.14307 Mbytes 页数：6 Pages	INNOGRATION 远创达	INNOGRATION
STAV58016P2	文件：1.14307 Mbytes Page：6 Pages	Gallium Nitride 50V, 16W, DC-6GHz RF Power Transistor Description The STAV58016P2 is a 16 watt, unmatched GaN HEMT, ideal for general applications up to 6GHz It features high gain, wide band and low cost, in 4*4.5mm DFN plastic package. It can support CW, pulse or any modulated signal. There is no guarantee of performance when this part is used o 文件：1.14307 Mbytes 页数：6 Pages	INNOGRATION 远创达	INNOGRATION
STAV58016P2	文件：300 bytes Page：1 Pages	GaN Transistors	Innogration 远创达	Innogration
STB10LN80K5	文件：0 bytes Page：0 Pages	TO-263	ST/意法上传：深圳市吉铭电子科技有限公司	ST/意法
STB120NF10T4	文件：0 bytes Page：0 Pages	TO-263	ST 上传：深圳市赛科盈电子有限公司	ST

更多STAV58016P2供应商更新时间2026-1-27 10:18:00