Gallium Nitride 50V, 50W, 4-5GHz RF Power Transistor

Description The STAV50050C6 is a 50watt, GaN HEMT, ideal for general applications from 4 to 5GHz. It features high gain, wide band and low cost, in 10*6mm plastic open cavity package, enabling surface mounted on PCB through grounding vias or soldered on heatsink directly. There is no guarantee

文件：1.04865 Mbytes 页数：4 Pages

INNOGRATION

远创达

Gallium Nitride 50V, 50W, 4-5GHz RF Power Transistor

Description The STAV50050C6 is a 50watt, GaN HEMT, ideal for general applications from 4 to 5GHz. It features high gain, wide band and low cost, in 10*6mm plastic open cavity package, enabling surface mounted on PCB through grounding vias or soldered on heatsink directly. There is no guarantee

文件：1.04865 Mbytes 页数：4 Pages

INNOGRATION

远创达

GaN Transistors

Innogration

远创达

TO-263

ST/意法

上传：深圳市吉铭电子科技有限公司

TO-263

ST

上传：深圳市赛科盈电子有限公司