RF Power LDMOS transistor for frequencies up to 1.5 GHz

Features • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate/source voltage range • In compliance with the European Directive 2002/95/EC Description The ST50V10100 is a common source N-channel enhancement-mode lateral field effect RF

文件：325.51 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

RF power LDMOS transistor for frequencies up to 1.5 GHz

Features • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate/source voltage range • In compliance with the European Directive 2002/95/EC Description The ST50V10200 is a common-source N-channel enhancement-mode lateral fieldeffect RF

文件：326.5 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

Trankiller

Trankiller

文件：223.06 Kbytes 页数：5 Pages

SHINDENGEN

RF Power LDMOS transistor HF to 1.5GHz

The ST50V10100 is a common source N-channel enhancement-mode lateral field effect RF power transistor designed for broadband commercial, Avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in class A/AB and C for all typical modulation formats. \n 主要特性\nHigh effic • High efficiency and linear gain operations \n • Integrated ESD protection \n • Large positive and negative gate/source voltage range \n • In compliance with the European Directive 2002/95/EC;

ST

意法半导体

RF Power LDMOS transistor HF to 1.5GHz

The ST50V10200 is a common-source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in A/AB and C classes for all typical modulation formats. \n 主要特性\nHigh eff • High efficiency and linear gain operations \n • Integrated ESD protection \n • Large positive and negative gate/source voltage range \n • In compliance with the European Directive 2002/95/EC;

ST

意法半导体

Surge Protectors / Trankillers (Surface Mount)

Shindengen

新电元