N Channel Enchancement Mode MOSFET

DESCRIPTION The ST2302 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage appl

文件：84.47 Kbytes 页数：6 Pages

STANSON

司坦森

N-Channel 20 V (D-S) MOSFET

文件：1.05175 Mbytes 页数：9 Pages

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Tranch MOSFET

Stanson

司坦森

N Channel Enhancement Mode MOSFET

DESCRIPTION The ST2302M is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app

文件：170.43 Kbytes 页数：6 Pages

STANSON

司坦森

N Channel Enhancement Mode MOSFET

DESCRIPTION The ST2302M is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app

文件：170.43 Kbytes 页数：6 Pages

STANSON

司坦森

N-Channel 20 V (D-S) MOSFET

文件：1.05269 Mbytes 页数：9 Pages

VBSEMI

微碧半导体