N Channel Enhancement Mode MOSFET

DESCRIPTION The ST2302M is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app

文件：170.43 Kbytes 页数：6 Pages

STANSON

司坦森

N Channel Enhancement Mode MOSFET

DESCRIPTION The ST2302M is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app

文件：170.43 Kbytes 页数：6 Pages

STANSON

司坦森

N-Channel 20 V (D-S) MOSFET

文件：1.05269 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：109.49 Kbytes 页数：7 Pages

Samhop

三合微科

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

文件：806.59 Kbytes 页数：8 Pages

Samhop

三合微科

N-Channel 20-V(D-S) MOSFET

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

文件：750.72 Kbytes 页数：5 Pages

SY

顺烨电子