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ST23

DO-35 Case

文件:155.73 Kbytes 页数:1 Pages

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ST2300

N Channel Enhancement Mode MOSFET

DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage app

文件:302.75 Kbytes 页数:7 Pages

STANSON

司坦森

ST2300S23RG

N Channel Enhancement Mode MOSFET

DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage app

文件:302.75 Kbytes 页数:7 Pages

STANSON

司坦森

ST2301

P Channel Enchancement Mode MOSFET

DESCRIPTION The ST2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage appl

文件:90.19 Kbytes 页数:6 Pages

STANSON

司坦森

ST2301

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件:471.09 Kbytes 页数:9 Pages

VBSEMI

微碧半导体

ST2301A

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件:482.72 Kbytes 页数:9 Pages

VBSEMI

微碧半导体

ST2301A

P Channel Enhancement Mode MOSFET

DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage applic

文件:221.59 Kbytes 页数:6 Pages

STANSON

司坦森

ST2301AS23RG

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件:472.2 Kbytes 页数:9 Pages

VBSEMI

微碧半导体

ST2301DS23RG

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件:472.1 Kbytes 页数:9 Pages

VBSEMI

微碧半导体

ST2301M

P Channel Enhancement Mode MOSFET

DESCRIPTION The ST2301M is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage appl

文件:219.29 Kbytes 页数:7 Pages

STANSON

司坦森

技术参数

  • Number of Receivers_typ:

    2

  • Supply Voltage_min(V):

    4.5

  • Supply Voltage_max(V):

    5.5

  • Data Rate_min(kbps):

    200

  • Data Rate_nom(kbps):

    400

  • Current Consumption (Icc)_typ(mA):

    1.5

  • Current Consumption (Icc)_max(mA):

    4

  • ESD:

    HBM Minimum_nom(V)

  • Operating Temperature_min(°C):

    -40

  • Operating Temperature_max(°C):

    85

  • Package:

    SO-16

  • General Description:

    VERY HIGH SPEED

  • Marketing Status:

    Active

  • Unit Price (US$):

    0.59

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8000
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23+
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23+
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3000
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STMicroelectronics
23+/22+
2060
原装进口订货7-10个工作日
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2023+
3000
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ST
22+
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12538
原装
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24+
N/A
82000
一级代理-主营优势-实惠价格-不悔选择
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更多ST23供应商 更新时间2025-12-18 16:37:00