500mA SMART LDO

DESCRIPTION The ST1534A is intended for application such as power managed PCI and network interface cards (NICs), where operations from 3.3V VAUX supplymay be required when the 5V supply has been shut down. During regular operation, 3.3V power for the PCI card is provided by the internal LDO

文件：552.58 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

SCHOTTKY BARRIER RECTIFIER

Features 150'C TJ operation Center tap configuration Ultralow forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb −

文件：851.67 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability 

文件：455.48 Kbytes 页数：7 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Center tap configuration  Low forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Terminals finish: 100 Pure Tin  “-A” is an AEC-Q101 qualified devic

文件：484.3 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY BARRIER RECTIFIER

Features  150'C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability 

文件：294.67 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Center tap configuration  Low forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Terminals finish: 100 Pure Tin  “-A” is an AEC-Q101 qualified devic

文件：333.29 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

15 Ampere,50 Volt Trench Process Low Vf Schottky Barrier Rectifier

Features  Low forward voltage drop  ThinkiSemi matured trench barrier schottky  High current capability  High surge current capability  Low reverse leakage current Application Inverter/UPS/Converter/BMS Photovoltaic Solar Cell Protection/SMPS Battery Reverse Protection Circuit/

文件：1.32208 Mbytes 页数：3 Pages

THINKISEMI

思祁半导体

SCHOTTKY RECTIFIER

Features  150 'C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability

文件：447.27 Kbytes 页数：7 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features  150 'C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability 

文件：347.57 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a TO-220 package

Features • 100 avalanche tested • Ultra low on-resistance Applications • Switching applications Description This N-channel Power MOSFETs utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal c

文件：357.98 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体