SCHOTTKY RECTIFIER

Features  150 C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technolo

文件：443.38 Kbytes 页数：7 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features  150 C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technol

文件：347.43 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features  150 C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technolo

文件：445.88 Kbytes 页数：7 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technolo

文件：347.37 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features  150 'C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technol

文件：379.54 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technolo

文件：347.18 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Low forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Trench MOS Schottky technology  “-A” is an AEC-Q101 qualified device  Terminals finish: 100 P

文件：476.44 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

500mA SMART LDO

DESCRIPTION The ST1534A is intended for application such as power managed PCI and network interface cards (NICs), where operations from 3.3V VAUX supplymay be required when the 5V supply has been shut down. During regular operation, 3.3V power for the PCI card is provided by the internal LDO

文件：552.58 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

500mA SMART LDO

DESCRIPTION The ST1534A is intended for application such as power managed PCI and network interface cards (NICs), where operations from 3.3V VAUX supplymay be required when the 5V supply has been shut down. During regular operation, 3.3V power for the PCI card is provided by the internal LDO

文件：552.58 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

500mA SMART LDO

DESCRIPTION The ST1534A is intended for application such as power managed PCI and network interface cards (NICs), where operations from 3.3V VAUX supplymay be required when the 5V supply has been shut down. During regular operation, 3.3V power for the PCI card is provided by the internal LDO

文件：552.58 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体