SST6601-C

Marking：6601；Package：SOT-26；N And P-Channel Enhancement Mode Power MOSFET

STM6601

Smartpush-buttonon/offcontrollerwithSmartResetTMandpower-onlockout

Description TheSTM6600-01devicesmonitorthestateofconnectedpush-button(s)aswellassufficientsupplyvoltage.AnenableoutputcontrolspowerfortheapplicationthroughtheMOSFETtransistor,DC-DCconverter,regulator,etc.Ifthesupplyvoltageisaboveaprecisevoltagethreshold,th

STS6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-26package.

STS6601

P-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitch

STT6601

N&P-ChannelEnhancementModeMos.FET

STT6601

N-andP-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC

THN6601B

NPNSiGeRFTRANSISTOR

TPC6601

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPC6601

TransistorSiliconPNPEpitaxialType

TS6601H

TactSwitchSeries(6x6mm)