SST39VF6402B数据手册集成电路（IC）的存储器规格书PDF

描述 Description

AMD/Spansion compatible command set

The SST39VF6402B device is a 4M x16, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. This devices conforms to JEDEC standard pinouts for x16 memories and is command set compatible with Flash devices that support the AMD/Spansion command set, enabling customers to save time and resources in implementation.

特性 Features

•Organized as 4M x16
•2.7-3.6V Read/Erase/Write Operation
•Superior Reliability
• Endurance: 100,000 Cycles (Typical)
• Greater than 100 years Data Retention
•Low Power Consumption (typical values at 5 MHz)
• Active Current: 9 mA (typical)
• Standby Current: 3 µA (typical)
• Auto Low Power Mode: 3 µA (typical)
•Fast Erase Capability
• Sector-Erase – Uniform 2 KWord sectors, 18 ms (typical)
•Block-Erase – Uniform 32 KWord blocks, 18 ms (typical)
•Chip-Erase – 40 ms (typical)
•Erase-Suspend/Erase-Resume
•Fast Program
• Word-Program Time: 7 µs (typical)
• Automatic Write Timing with Internal VPP Generation
•End-of-Write Detection– Toggle Bits/Data# Polling
•Fast Read Access Time: 70 ns– 90 ns
•Hardware Block-Protection/WP# Control Pin
• Top Block-Protection (top 32 KWord)for SST39VF6402B
• Bottom Block-Protection (bottom 32 KWord)for SST39VF6401B
•Hardware Reset Pin (RST#)
•Security-ID Feature– SST: 128 bits; User: 128 bits
•Latched Address and Data
•JEDEC Standard
• Flash EEPROM Pin Assignments
• Software command sequence compatibility
• Address format is 11 bits, A10-A0
• Block-Erase 6th Bus Write Cycle is 30H
• Sector-Erase 6th Bus Write Cycle is 50H

•Packages Available
• 48-lead TSOP (12mm x 20mm)
• 48-ball TFBGA (8mm x 10mm)
•All non-Pb (lead-free) devices are RoHS compliant

简介

SST39VF6402B属于集成电路（IC）的存储器。由制造生产的SST39VF6402B存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。