SST39VF1601C

16 Mbit (x16) Multi-Purpose Flash Plus

ProductDescription TheSST39VF1601CandSST39VF1602Cdevicesare1Mx16CMOSMulti-PurposeFlashPlus(MPF+)manufacturedwithSSTproprietary,highperformanceCMOSSuperFlashtechnology.Thesplit-gatecelldesignandthick-oxidetunnelinginjectorattainbetterreliabilityandmanufacturabili

SST39VF1601C

16 Mbit (x16) Multi-Purpose Flash Plus

PRODUCTDESCRIPTION TheSST39VF1601CandSST39VF1602Cdevicesare 1Mx16CMOSMulti-PurposeFlashPlus(MPF+)manufactured withSSTproprietary,highperformance CMOSSuperFlashtechnology.Thesplit-gatecell designandthick-oxidetunnelinginjectorattainbetter reliabilityandmanufactur

SST39VF1601C

16Mb 2.7-3.6V Parallel Flash; Organized as 1M x16: SST39VF1601C/1602C\nLow Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)\nHardware Block-Protection/WP# Input Pin– Top Block-Protection (top 8 KWord)– Bottom Block-Protection (bottom 8 KWord)\nSector-Erase Capability– Uniform 2 KWord sectors\nBlock-Erase Capability– Flexible block architecture; one 8-, two 4-, one16-, and thirty one 32-KWord blocks\nChip-Erase Capability\nErase-Suspend/Erase-Resume Capabilities\nHardware Reset Pin (RST#)\nSecurity-ID Feature– SST: 128 bits; User: 128 words\nFast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Word-Program Time: 7 µs (typical)\nPackages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)– 48-ball WFBGA (4mm x 6mm)\nAll devices are RoHS compliant;

The SST39VF1601C device is 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF1601C writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.

SST39VF1601C

16 Mbit (x16) Multi-Purpose Flash Plus;

SST39VF1601C-70-4C-B3KE

16 Mbit (x16) Multi-Purpose Flash Plus

PRODUCTDESCRIPTION TheSST39VF1601CandSST39VF1602Cdevicesare 1Mx16CMOSMulti-PurposeFlashPlus(MPF+)manufactured withSSTproprietary,highperformance CMOSSuperFlashtechnology.Thesplit-gatecell designandthick-oxidetunnelinginjectorattainbetter reliabilityandmanufactur

SST39VF1601C-70-4C-B3QE

16 Mbit (x16) Multi-Purpose Flash Plus

PRODUCTDESCRIPTION TheSST39VF1601CandSST39VF1602Cdevicesare 1Mx16CMOSMulti-PurposeFlashPlus(MPF+)manufactured withSSTproprietary,highperformance CMOSSuperFlashtechnology.Thesplit-gatecell designandthick-oxidetunnelinginjectorattainbetter reliabilityandmanufactur

SST39VF1601C-70-4C-EKE

16 Mbit (x16) Multi-Purpose Flash Plus

PRODUCTDESCRIPTION TheSST39VF1601CandSST39VF1602Cdevicesare 1Mx16CMOSMulti-PurposeFlashPlus(MPF+)manufactured withSSTproprietary,highperformance CMOSSuperFlashtechnology.Thesplit-gatecell designandthick-oxidetunnelinginjectorattainbetter reliabilityandmanufactur

SST39VF1601C-70-4C-EQE

16 Mbit (x16) Multi-Purpose Flash Plus

PRODUCTDESCRIPTION TheSST39VF1601CandSST39VF1602Cdevicesare 1Mx16CMOSMulti-PurposeFlashPlus(MPF+)manufactured withSSTproprietary,highperformance CMOSSuperFlashtechnology.Thesplit-gatecell designandthick-oxidetunnelinginjectorattainbetter reliabilityandmanufactur

SST39VF1601C-70-4C-MAKE

16 Mbit (x16) Multi-Purpose Flash Plus

PRODUCTDESCRIPTION TheSST39VF1601CandSST39VF1602Cdevicesare 1Mx16CMOSMulti-PurposeFlashPlus(MPF+)manufactured withSSTproprietary,highperformance CMOSSuperFlashtechnology.Thesplit-gatecell designandthick-oxidetunnelinginjectorattainbetter reliabilityandmanufactur

SST39VF1601C-70-4C-MAQE

16 Mbit (x16) Multi-Purpose Flash Plus

PRODUCTDESCRIPTION TheSST39VF1601CandSST39VF1602Cdevicesare 1Mx16CMOSMulti-PurposeFlashPlus(MPF+)manufactured withSSTproprietary,highperformance CMOSSuperFlashtechnology.Thesplit-gatecell designandthick-oxidetunnelinginjectorattainbetter reliabilityandmanufactur