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SST39VF1601C-70-4C-MAQE集成电路(IC)存储器规格书PDF中文资料
厂商型号 |
SST39VF1601C-70-4C-MAQE |
参数属性 | SST39VF1601C-70-4C-MAQE 封装/外壳为48-WFBGA;包装为托盘;类别为集成电路(IC) > 存储器;产品描述:IC FLASH 16MBIT PARALLEL 48WFBGA |
功能描述 | 16 Mbit (x16) Multi-Purpose Flash Plus |
文件大小 |
1.69906 Mbytes |
页面数量 |
38 页 |
生产厂商 | Microchip Technology Inc. |
企业简称 |
Microchip【微芯科技】 |
中文名称 | 微芯科技股份有限公司官网 |
原厂标识 | |
数据手册 | |
更新时间 | 2024-5-3 23:00:00 |
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SST39VF1601C-70-4C-MAQE规格书详情
PRODUCT DESCRIPTION
The SST39VF1601C and SST39VF1602C devices are
1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured
with SST proprietary, high performance
CMOS SuperFlash technology. The split-gate cell
design and thick-oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST39VF160xC writes (Program
or Erase) with a 2.7-3.6V power supply. These
devices conform to JEDEC standard pinouts for x16
memories.
Featuring high performance Word-Program, the
SST39VF1601C/1602C devices provide a typical
Word-Program time of 7 μsec. These devices use Toggle
Bit, Data# Polling, or the RY/BY# pin to indicate the
completion of Program operation. To protect against
inadvertent write, they have on-chip hardware and
Software Data Protection schemes. Designed, manufactured,
and tested for a wide spectrum of applications,
these devices are offered with a guaranteed
typical endurance of 100,000 cycles. Data retention is
rated at greater than 100 years.
The SST39VF1601C/1602C devices are suited for
applications that require convenient and economical
updating of program, configuration, or data memory.
For all system applications, they significantly improve
performance and reliability, while lowering power
consumption. They inherently use less energy during
Erase and Program than alternative flash technologies.
The total energy consumed is a function of the applied
voltage, current, and time of application. Since for any
given voltage range, the SuperFlash technology uses
less current to program and has a shorter erase time,
the total energy consumed during any Erase or Program
operation is less than alternative flash technologies.
These devices also improve flexibility while
lowering the cost for program, data, and configuration
storage applications.
The SuperFlash technology provides fixed Erase and
Program times, independent of the number of Erase/
Program cycles that have occurred. Therefore the system
software or hardware does not have to be modified
or de-rated as is necessary with alternative flash technologies,
whose Erase and Program times increase
with accumulated Erase/Program cycles.
To meet high density, surface mount requirements, the
SST39VF1601C/1602C are offered in 48-lead TSOP,
48-ball TFBGA, and 48-ball WFBGA packages. See
Figures 4-1, 4-2, and 4-3 for pin assignments.
FEATURES
• Organized as 1M x16: SST39VF1601C/1602C
• Single Voltage Read and Write Operations
- 2.7-3.6V
• Superior Reliability
- Endurance: 100,000 Cycles (Typical)
- Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5
MHz)
- Active Current: 9 mA (typical)
- Standby Current: 3 μA (typical)
- Auto Low Power Mode: 3 μA (typical)
• Hardware Block-Protection/WP# Input Pin
- Top Block-Protection (top 8 KWord)
- Bottom Block-Protection (bottom 8 KWord)
• Sector-Erase Capability
- Uniform 2 KWord sectors
• Block-Erase Capability
- Flexible block architecture; one 8-, two 4-, one
16-, and thirty one 32-KWord blocks
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#)
• Latched Address and Data
• Security-ID Feature
- SST: 128 bits; User: 128 words
• Fast Read Access Time:
- 70 ns
• Fast Erase and Word-Program:
- Sector-Erase Time: 18 ms (typical)
- Block-Erase Time: 18 ms (typical)
- Chip-Erase Time: 40 ms (typical)
- Word-Program Time: 7 μs (typical)
• Automatic Write Timing
- Internal VPP Generation
• End-of-Write Detection
- Toggle Bits
- Data# Polling
- Ready/Busy# Pin
• CMOS I/O Compatibility
• JEDEC Standard
- Flash EEPROM Pinouts and command sets
• Packages Available
- 48-lead TSOP (12mm x 20mm)
- 48-ball TFBGA (6mm x 8mm)
- 48-ball WFBGA (4mm x 6mm)
• All devices are RoHS compliant
SST39VF1601C-70-4C-MAQE属于集成电路(IC) > 存储器。微芯科技股份有限公司制造生产的SST39VF1601C-70-4C-MAQE存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。
产品属性
- 产品编号:
SST39VF1601C-70-4C-MAQE
- 制造商:
Microchip Technology
- 类别:
集成电路(IC) > 存储器
- 系列:
SST39 MPF™
- 包装:
托盘
- 存储器类型:
非易失
- 存储器格式:
闪存
- 技术:
闪存
- 存储容量:
16Mb(1M x 16)
- 存储器接口:
并联
- 写周期时间 - 字,页:
10µs
- 电压 - 供电:
2.7V ~ 3.6V
- 工作温度:
0°C ~ 70°C(TA)
- 安装类型:
表面贴装型
- 封装/外壳:
48-WFBGA
- 供应商器件封装:
48-WFBGA(6x4)
- 描述:
IC FLASH 16MBIT PARALLEL 48WFBGA
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MICROCHIP(美国微芯) |
23+ |
WFBGA48(4x6) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
SST |
2020+ |
FBGA-48 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
SST |
23+ |
TFBGA |
20000 |
原厂原装正品现货 |
询价 | ||
SST |
23+ |
TSOP48 |
2500 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
询价 | ||
MicrochipTechnology |
2022 |
ICFLASHMPF16MBIT70NS48TF |
5058 |
原厂原装正品,价格超越代理 |
询价 | ||
MICROCHIP-微芯 |
24+25+/26+27+ |
BGA-48 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
MicrochipTechnology |
18+ |
6800 |
ICFLASH16MBIT70NS48WFBGA |
询价 | |||
MICROCHIP(美国微芯) |
2112+ |
WFBGA-48 |
31500 |
740个/托盘一级代理专营品牌!原装正品,优势现货,长 |
询价 | ||
微芯/麦瑞 |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
询价 | ||
Microchip |
23+ |
48TFBGA (6x8) |
8000 |
只做原装现货 |
询价 |