SST39VF1601C-70-4C-MAQE集成电路(IC)存储器规格书PDF中文资料

SST39VF1601C-70-4C-MAQE
厂商型号

SST39VF1601C-70-4C-MAQE

参数属性

SST39VF1601C-70-4C-MAQE 封装/外壳为48-WFBGA;包装为托盘;类别为集成电路(IC) > 存储器;产品描述:IC FLASH 16MBIT PARALLEL 48WFBGA

功能描述

16 Mbit (x16) Multi-Purpose Flash Plus
IC FLASH 16MBIT PARALLEL 48WFBGA

文件大小

1.69906 Mbytes

页面数量

38

生产厂商 Microchip Technology Inc.
企业简称

Microchip微芯科技

中文名称

微芯科技股份有限公司官网

原厂标识
数据手册

原厂下载下载地址一下载地址二到原厂下载

更新时间

2024-5-3 23:00:00

SST39VF1601C-70-4C-MAQE规格书详情

PRODUCT DESCRIPTION

The SST39VF1601C and SST39VF1602C devices are

1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured

with SST proprietary, high performance

CMOS SuperFlash technology. The split-gate cell

design and thick-oxide tunneling injector attain better

reliability and manufacturability compared with alternate

approaches. The SST39VF160xC writes (Program

or Erase) with a 2.7-3.6V power supply. These

devices conform to JEDEC standard pinouts for x16

memories.

Featuring high performance Word-Program, the

SST39VF1601C/1602C devices provide a typical

Word-Program time of 7 μsec. These devices use Toggle

Bit, Data# Polling, or the RY/BY# pin to indicate the

completion of Program operation. To protect against

inadvertent write, they have on-chip hardware and

Software Data Protection schemes. Designed, manufactured,

and tested for a wide spectrum of applications,

these devices are offered with a guaranteed

typical endurance of 100,000 cycles. Data retention is

rated at greater than 100 years.

The SST39VF1601C/1602C devices are suited for

applications that require convenient and economical

updating of program, configuration, or data memory.

For all system applications, they significantly improve

performance and reliability, while lowering power

consumption. They inherently use less energy during

Erase and Program than alternative flash technologies.

The total energy consumed is a function of the applied

voltage, current, and time of application. Since for any

given voltage range, the SuperFlash technology uses

less current to program and has a shorter erase time,

the total energy consumed during any Erase or Program

operation is less than alternative flash technologies.

These devices also improve flexibility while

lowering the cost for program, data, and configuration

storage applications.

The SuperFlash technology provides fixed Erase and

Program times, independent of the number of Erase/

Program cycles that have occurred. Therefore the system

software or hardware does not have to be modified

or de-rated as is necessary with alternative flash technologies,

whose Erase and Program times increase

with accumulated Erase/Program cycles.

To meet high density, surface mount requirements, the

SST39VF1601C/1602C are offered in 48-lead TSOP,

48-ball TFBGA, and 48-ball WFBGA packages. See

Figures 4-1, 4-2, and 4-3 for pin assignments.

FEATURES

• Organized as 1M x16: SST39VF1601C/1602C

• Single Voltage Read and Write Operations

- 2.7-3.6V

• Superior Reliability

- Endurance: 100,000 Cycles (Typical)

- Greater than 100 years Data Retention

• Low Power Consumption (typical values at 5

MHz)

- Active Current: 9 mA (typical)

- Standby Current: 3 μA (typical)

- Auto Low Power Mode: 3 μA (typical)

• Hardware Block-Protection/WP# Input Pin

- Top Block-Protection (top 8 KWord)

- Bottom Block-Protection (bottom 8 KWord)

• Sector-Erase Capability

- Uniform 2 KWord sectors

• Block-Erase Capability

- Flexible block architecture; one 8-, two 4-, one

16-, and thirty one 32-KWord blocks

• Chip-Erase Capability

• Erase-Suspend/Erase-Resume Capabilities

• Hardware Reset Pin (RST#)

• Latched Address and Data

• Security-ID Feature

- SST: 128 bits; User: 128 words

• Fast Read Access Time:

- 70 ns

• Fast Erase and Word-Program:

- Sector-Erase Time: 18 ms (typical)

- Block-Erase Time: 18 ms (typical)

- Chip-Erase Time: 40 ms (typical)

- Word-Program Time: 7 μs (typical)

• Automatic Write Timing

- Internal VPP Generation

• End-of-Write Detection

- Toggle Bits

- Data# Polling

- Ready/Busy# Pin

• CMOS I/O Compatibility

• JEDEC Standard

- Flash EEPROM Pinouts and command sets

• Packages Available

- 48-lead TSOP (12mm x 20mm)

- 48-ball TFBGA (6mm x 8mm)

- 48-ball WFBGA (4mm x 6mm)

• All devices are RoHS compliant

SST39VF1601C-70-4C-MAQE属于集成电路(IC) > 存储器。微芯科技股份有限公司制造生产的SST39VF1601C-70-4C-MAQE存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

产品属性

  • 产品编号:

    SST39VF1601C-70-4C-MAQE

  • 制造商:

    Microchip Technology

  • 类别:

    集成电路(IC) > 存储器

  • 系列:

    SST39 MPF™

  • 包装:

    托盘

  • 存储器类型:

    非易失

  • 存储器格式:

    闪存

  • 技术:

    闪存

  • 存储容量:

    16Mb(1M x 16)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    10µs

  • 电压 - 供电:

    2.7V ~ 3.6V

  • 工作温度:

    0°C ~ 70°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    48-WFBGA

  • 供应商器件封装:

    48-WFBGA(6x4)

  • 描述:

    IC FLASH 16MBIT PARALLEL 48WFBGA

供应商 型号 品牌 批号 封装 库存 备注 价格
MICROCHIP(美国微芯)
23+
WFBGA48(4x6)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
SST
2020+
FBGA-48
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
SST
23+
TFBGA
20000
原厂原装正品现货
询价
SST
23+
TSOP48
2500
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
MicrochipTechnology
2022
ICFLASHMPF16MBIT70NS48TF
5058
原厂原装正品,价格超越代理
询价
MICROCHIP-微芯
24+25+/26+27+
BGA-48
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
MicrochipTechnology
18+
6800
ICFLASH16MBIT70NS48WFBGA
询价
MICROCHIP(美国微芯)
2112+
WFBGA-48
31500
740个/托盘一级代理专营品牌!原装正品,优势现货,长
询价
微芯/麦瑞
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
Microchip
23+
48TFBGA (6x8)
8000
只做原装现货
询价