首页>SST34HF1682C-70-4E-B1SE>规格书详情
SST34HF1682C-70-4E-B1SE中文资料SST数据手册PDF规格书
相关芯片规格书
更多- SST34HF1681-70-4C-L1P
- SST34HF1681
- SST34HF1681-70-4E-L1P
- SST34HF1642S-70-4E-LSE
- SST34HF1682C-70-4C-B1SE
- SST34HF1682C-70-4C-L1PE
- SST34HF1682C-70-4C-LSE
- SST34HF1642S-70-4E-LPE
- SST34HF1682C-70-4C-L1SE
- SST34HF164C
- SST34HF164C-70-4E-LBK
- SST34HF164G-70-4C-LBK
- SST34HF1681J-70-4E-L1PE
- SST34HF164G-70-4E-LBK
- SST34HF164G-70-4C-L3KE
- SST34HF1681J
- SST34HF164C-70-4C-LBK
- SST34HF164G-70-4E-L3KE
SST34HF1682C-70-4E-B1SE规格书详情
PRODUCT DESCRIPTION
The SST34HF16x2C/D/S ComboMemory devices integrate either a 1M x16 or 2M x8 CMOS flash memory bank with either a 128K x16/256K x8, 256K x16/512 x8, or 512K x16/1024K x8 CMOS SRAM or pseudo SRAM (PSRAM) memory bank in a multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF16x2C/D/S devices are ideal for applications such as cellular phones, GPS devices, PDAs, and other portable electronic devices in a low power and small form factor system.
FEATURES:
• Flash Organization: 1M x16 or 2M x8
• Dual-Bank Architecture for Concurrent Read/Write Operation
– 16 Mbit: 4 Mbit + 12 Mbit
• (P)SRAM Organization:
– 2 Mbit: 128K x16 or 256K x8
– 4 Mbit: 256K x16 or 512K x8
– 8 Mbit: 512K x16 or 1024K x8
• Single 2.7-3.3V Read and Write Operations
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Current: 25 mA (typical)
– Standby Current: 20 µA (typical)
• Hardware Sector Protection (WP#)
– Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high
• Hardware Reset Pin (RST#)
– Resets the internal state machine to reading data array
• Byte Selection for Flash (CIOF pin)
– Selects 8-bit or 16-bit mode
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Block-Erase Capability
– Uniform 32 KWord blocks
• Read Access Time
– Flash: 70 ns
– (P)SRAM: 70 ns
• Erase-Suspend / Erase-Resume Capabilities
• Security ID Feature
– SST: 128 bits
– User: 128 bits
• Latched Address and Data
• Fast Erase and Word-/Byte-Program (typical):
– Sector-Erase Time: 18 ms
– Block-Erase Time: 18 ms
– Chip-Erase Time: 35 ms
– Word-Program Time: 7 µs
• Automatic Write Timing
– Internal VPP Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
– Ready/Busy# pin
• CMOS I/O Compatibility
• JEDEC Standard Command Set
• Packages Available
– 56-ball LFBGA (8mm x 10mm)
– 62-ball LFBGA (8mm x 10mm)
产品属性
- 型号:
SST34HF1682C-70-4E-B1SE
- 制造商:
SST
- 制造商全称:
Silicon Storage Technology, Inc
- 功能描述:
16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SST |
2020+ |
BGA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
SST |
23+ |
NA/ |
3265 |
原厂直销,现货供应,账期支持! |
询价 | ||
SST |
0936+ |
BGA56 |
2225 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
SST |
21+ |
BGA |
3076 |
原装现货假一赔十 |
询价 | ||
SST |
22+ |
BGA56 |
8700 |
原装现货 |
询价 | ||
SST |
2339+ |
BGA |
6232 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
SST |
21+ |
BGA |
2000 |
全新原装 现货 价优 |
询价 | ||
SST |
23+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
SST |
1726+ |
BGA |
6528 |
只做进口原装正品现货,假一赔十! |
询价 | ||
SST |
BGA56 |
893993 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 |