SST25VF512数据手册集成电路（IC）的存储器规格书PDF

描述 Description

SST25VF512 SPI serial flash memory is manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

特性 Features

Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3
Low Power Consumption:– Active Read Current: 7 mA (typical)– Standby Current: 8 µA (typical)
Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks
Fast Erase and Byte-Program:– Chip-Erase Time: 70 ms (typical)– Sector- or Block-Erase Time: 18 ms (typical)– Byte-Program Time: 14 µs (typical)
Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations
Packages Available– 8-lead SOIC (4.9mm x 6mm)– 8-contact WSON
All non-Pb (lead-free) devices are RoHS compliant

简介

SST25VF512属于集成电路（IC）的存储器。由制造生产的SST25VF512存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。