SST25VF080B中文资料8Mb 2.7-3.6V SPI Serial Flash数据手册Microchip规格书

描述 Description

The SST25VF080B devices are enhanced with improved operating frequency for lower power consumption. SST25VF080B SPI serial flash memories are manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

特性 Features

Single Voltage Read and Write Operations– 2.7-3.6V
Supports 50 MHz SPI clock (80 MHz no longer available see EOL NOTIFICATION)
Endurance: 100,000 Cycles (typical)
Greater than 100 years Data Retention
Program & Erase Current: 30mA (max)
Active Read Current: 10 mA (typical)
Standby Current: 5 µA (typical)
Uniform 4 KByte sectors
Uniform 32 KByte & 64 KByte overlay blocks
Chip-Erase Time: 35 ms (typical)
Sector-/Block-Erase Time: 18 ms (typical)
Byte-Program Time: 7 µs (typical)
Decrease total chip programming time over Byte-Program operations
Software polling the BUSY bit in Status Register
Busy Status readout on SO pin in AAI Mode
Suspends a serial sequence to the memory without deselecting the device
Enables/Disables the Lock-Down function of the status register
Write protection through Block-Protection bits in the status register
Commercial: 0°C to +70°C
Industrial: -40°C to +85°C
Packages Available– 8-lead SOIC (200 mils)– 8-contact WSON (6mm x 5mm)– 8-lead PDIP (300 mils)– 8-bump CSP
All devices are RoHS compliant

简介

SST25VF080B属于集成电路（IC）的存储器。由制造生产的SST25VF080B存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。