Advanced Power MOSFET

BVDSS = 600 V RDS(on) = 2.2Ω ID = 2.6 A FEATURES Logic Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 μA (Max.) @ VDS = 600V Lower RDS(

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FAIRCHILD

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Advanced Power MOSFET

ONSEMI

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N-Channel enhancement mode power mos transistor

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 1.33 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS)

文件：337.13 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

N-Channel enhancement mode power mos transistor

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 1.33 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS)

文件：337.13 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

5A, 600V NCHANNEL MOSFET

文件：486.28 Kbytes 页数：7 Pages

SILAN

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