N-Channel 650 V (D-S) MOSFET

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VBSEMI

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Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA (Max.) @ VDS= 600V Lower RDS(ON) : 3.892 W (Typ.)

文件：267.23 Kbytes 页数：7 Pages

FAIRCHILD

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isc N-Channel MOSFET Transistor

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ISC

无锡固电

600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in th

文件：856.96 Kbytes 页数：10 Pages

FAIRCHILD

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