Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA (Max.) @ VDS= 600V Lower RDS(ON) : 3.892 W (Typ.)

文件：267.23 Kbytes 页数：7 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

文件：264.21 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

ONSEMI

安森美半导体

600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in th

文件：856.96 Kbytes 页数：10 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

文件：264.22 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA (Max.) @ VDS= 600V Lower RDS(ON) : 3.892 W (Typ.)

文件：267.86 Kbytes 页数：7 Pages

Fairchild

仙童半导体