85 쨘C Sub-Miniature Aluminum Electrolytic Capacitors

Type SS 85 ºC Sub-Miniature Aluminum Electrolytic Capacitors Radial Leaded, General Purpose Aluminum Electrolytic Type SS is a sub-miniature radial leaded aluminum electrolytic capacitor with a +85 ºC, 1000 hour long life rating. The SS has a small size and is ideal for high density packaging ap

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CDE

Solid State Relay

. High reliability by S.M.T. & TQC. (SURFACE MOUNTING TECHNOLOGY . High isolation more than 50M / 500 VDC . High dielectric strength over 2.5 KV . Low switching current, current less than 7.5ma / 12 VDC C MOS IC or TTL compatible . Low EMI / EFI & surge by means of zero cross trigger method

文件：1.79882 Mbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Solid State Relay

. High reliability by S.M.T. & TQC. (SURFACE MOUNTING TECHNOLOGY . High isolation more than 50M / 500 VDC . High dielectric strength over 2.5 KV . Low switching current, current less than 7.5ma / 12 VDC C MOS IC or TTL compatible . Low EMI / EFI & surge by means of zero cross trigger method

文件：1.79882 Mbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Solid State Relay

. High reliability by S.M.T. & TQC. (SURFACE MOUNTING TECHNOLOGY . High isolation more than 50M / 500 VDC . High dielectric strength over 2.5 KV . Low switching current, current less than 7.5ma / 12 VDC C MOS IC or TTL compatible . Low EMI / EFI & surge by means of zero cross trigger method

文件：1.79882 Mbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Solid State Relay

. High reliability by S.M.T. & TQC. (SURFACE MOUNTING TECHNOLOGY . High isolation more than 50M / 500 VDC . High dielectric strength over 2.5 KV . Low switching current, current less than 7.5ma / 12 VDC C MOS IC or TTL compatible . Low EMI / EFI & surge by means of zero cross trigger method

文件：1.79882 Mbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：644.85 Kbytes 页数：9 Pages

Fairchild

仙童半导体

Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA (Max.) @ VDS= 600V Lower RDS(ON) : 3.892 W (Typ.)

文件：267.86 Kbytes 页数：7 Pages

Fairchild

仙童半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：644.85 Kbytes 页数：9 Pages

Fairchild

仙童半导体

20 AMPS 100 VOLTS CENTER TAP SCHOTTKY RECTIFIER

文件：178.18 Kbytes 页数：2 Pages

SSDI

20 AMPS 100 VOLTS CENTER TAP SCHOTTKY RECTIFIER

文件：178.18 Kbytes 页数：2 Pages

SSDI