SSR2N60B中文资料仙童半导体数据手册PDF规格书

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features

• 1.8A, 600V, RDS(on) = 5.0Ω @VGS = 10 V

• Low gate charge ( typical 12.5 nC)

• Low Crss ( typical 7.6 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability