Advanced MOSFET process technology

文件：496.34 Kbytes 页数：8 Pages

SILIKRON

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N-Channel Power MOSFET

文件：352.19 Kbytes 页数：7 Pages

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N-Channel Enhancement Mode MOSFET

文件：253.23 Kbytes 页数：4 Pages

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300V, 50A PDP IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Features • High current capability • Low saturation voltage: VCE(sat) =1.4V @ IC

文件：568.74 Kbytes 页数：7 Pages

Fairchild

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