N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：174.59 Kbytes 页数：5 Pages

SSC

Silicon Standard Corp.

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

SiliconStandard

Specification of GaAlAs IR Emitting Diode Chip

文件：96.12 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Specification of GaAlAs IR Emitting Diode Chip

DESCRIPTION TB9408VA is an infrared, 940 nm emitting diode in GaAlAs multi quantum well technology with high radiant power and high speed. Anode is the bond pad on top. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assume

文件：93.22 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Specification of GaAlAs IR Emitting Diode Chip

DESCRIPTION TB9408VA is an infrared, 940 nm emitting diode in GaAlAs multi quantum well technology with high radiant power and high speed. Anode is the bond pad on top. FEATURES • Package type: chip • Package form: single chip • Technology: multi quantum well (MQW) • Dimensions chip (L x

文件：93.75 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司