TB9408VA资料使用说明书批发供应威世VISHAY-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
TB9408VA	文件：93.22 Kbytes Page：4 Pages	Specification of GaAlAs IR Emitting Diode Chip DESCRIPTION TB9408VA is an infrared, 940 nm emitting diode in GaAlAs multi quantum well technology with high radiant power and high speed. Anode is the bond pad on top. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assume 文件：93.22 Kbytes 页数：4 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
TB9408VA	文件：93.75 Kbytes Page：4 Pages	Specification of GaAlAs IR Emitting Diode Chip DESCRIPTION TB9408VA is an infrared, 940 nm emitting diode in GaAlAs multi quantum well technology with high radiant power and high speed. Anode is the bond pad on top. FEATURES • Package type: chip • Package form: single chip • Technology: multi quantum well (MQW) • Dimensions chip (L x 文件：93.75 Kbytes 页数：4 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
TB9408VA	文件：96.12 Kbytes Page：4 Pages	Specification of GaAlAs IR Emitting Diode Chip 文件：96.12 Kbytes 页数：4 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
TB9408VA_V01	文件：93.22 Kbytes Page：4 Pages	Specification of GaAlAs IR Emitting Diode Chip DESCRIPTION TB9408VA is an infrared, 940 nm emitting diode in GaAlAs multi quantum well technology with high radiant power and high speed. Anode is the bond pad on top. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assume 文件：93.22 Kbytes 页数：4 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
TB9408VA_V02	文件：93.75 Kbytes Page：4 Pages	Specification of GaAlAs IR Emitting Diode Chip DESCRIPTION TB9408VA is an infrared, 940 nm emitting diode in GaAlAs multi quantum well technology with high radiant power and high speed. Anode is the bond pad on top. FEATURES • Package type: chip • Package form: single chip • Technology: multi quantum well (MQW) • Dimensions chip (L x 文件：93.75 Kbytes 页数：4 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
TB9408VA-SF-F	文件：93.75 Kbytes Page：4 Pages	Specification of GaAlAs IR Emitting Diode Chip DESCRIPTION TB9408VA is an infrared, 940 nm emitting diode in GaAlAs multi quantum well technology with high radiant power and high speed. Anode is the bond pad on top. FEATURES • Package type: chip • Package form: single chip • Technology: multi quantum well (MQW) • Dimensions chip (L x 文件：93.75 Kbytes 页数：4 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
TB9408VA-SF-F	文件：93.22 Kbytes Page：4 Pages	Specification of GaAlAs IR Emitting Diode Chip DESCRIPTION TB9408VA is an infrared, 940 nm emitting diode in GaAlAs multi quantum well technology with high radiant power and high speed. Anode is the bond pad on top. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assume 文件：93.22 Kbytes 页数：4 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
TB9408VA-SF-F	文件：96.12 Kbytes Page：4 Pages	Specification of GaAlAs IR Emitting Diode Chip 文件：96.12 Kbytes 页数：4 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
TB9408VA	文件：300 bytes Page：1 Pages	Specification of GaAlAs IR Emitting Diode Chip	Vishay 威世	Vishay

详细参数

型号：
TB9408VA
制造商：
Vishay Intertechnologies
功能描述：
IR EMITTER WAFER HIGH EFFICIENCY 940NM DIODE CHIP

供应商	型号	品牌	批号	封装	库存	备注	价格
艾睿（深圳）半导体有限公司	TB9408VA-SF-F	VISHAY/威世	2447	SMD	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
贸泽芯城（深圳）电子科技有限公司	TB9414VA	VISHAY/威世	23+	SMD	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
北京逸博微科技有限公司	TB-943+	MINI	20+		200	MINI代理分销常备现货!	询价
深圳市湘达电子科技有限公司	TB-943+	MINI	22+	NA	5000	只做原装,价格优惠,长期供货。	询价
兆亿微波(北京)科技有限公司	TB-943+	Mini-circuits			1000		询价
深圳市科恒伟业电子有限公司	TB-943+	MINI-CIRCUITS	2545+	SMD	4560	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市一线半导体有限公司	TB9450	TOS	24+		300	真实现货库存	询价
深圳市赛美科科技有限公司	TB-95	原厂		原厂封装	1237	一级代理原装正品假一罚十价格优势长期供货	询价

更多TB9408VA供应商更新时间2026-1-25 15:01:00

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