TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

Features (1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V) Applications • Power Management Switches

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TOSHIBA

东芝

Small Low ON resistance MOSFETs

Polarity：P-ch×2\nInternal Connection：Independent\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current (Q1) ID -4 A \nDrain-Source voltage (Q1) VDSS -20 V \nGate-Source voltage (Q1) VGSS +/-12 V \nDrain current (Q2) ID -4 A \nDrain-Source voltage (Q2) VDSS -20 V \nGate-Source voltage (Q2) VGSS +/-12 V \nPower Dissipation PD 1 W ;

Toshiba

东芝

SUPER超致
TO-220

SUPER超致

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DDC
SOP

DDC

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仙童
TO-220

仙童

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