丝印：NN；Package：US6；MOSFETs Silicon N-Channel MOS

1. Applications • High-Speed Switching 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)

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MOSFETs Silicon N-Channel MOS

1. Applications • High-Speed Switching 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)

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MOSFET 60V DUAL N-CHANNEL ENHANCEMENT MODE

DESCRIPTION V DS 60 V V GS 2 0 V ID(A)= 0.29 A R DS(ON) ON)=1.5Ω( @V GS =10V R DS(ON) ON)=2.0Ω( @V GS =4.5V The AM6N7002K is available i n SC 70 6 p ac kage FEATURES ⚫ High Speed Switching ⚫ ESD Protection > 2 k V HBM ⚫ Availabl e in SC 70 6 p acka ge APPLICATIONS ⚫ Portable

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创瑞科技

Dual N-Channel 60 V (D-S) MOSFET

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微碧半导体

High-Speed Switching Applications Analog Switch Applications

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