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SSM6L820R

丝印:ALA;Package:TSOP6F;MOSFETs Silicon P-/N-Channel MOS

1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Q2 P

文件:555.77 Kbytes 页数:12 Pages

TOSHIBA

东芝

SSM6L820R

丝印:ALA;Package:TSOP6F;Power Management Switches

文件:354.59 Kbytes 页数:12 Pages

TOSHIBA

东芝

SSM6L820R_V01

MOSFETs Silicon P-/N-Channel MOS

1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Q2 P

文件:555.77 Kbytes 页数:12 Pages

TOSHIBA

东芝

SSM6L820RLF

丝印:ALA;Package:TSOP6F;MOSFETs Silicon P-/N-Channel MOS

1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Q2 P

文件:555.77 Kbytes 页数:12 Pages

TOSHIBA

东芝

SSM6L820RLXGF

丝印:ALA;Package:TSOP6F;MOSFETs Silicon P-/N-Channel MOS

1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Q2 P

文件:555.77 Kbytes 页数:12 Pages

TOSHIBA

东芝

SSM6L820RLXHF

丝印:ALA;Package:TSOP6F;MOSFETs Silicon P-/N-Channel MOS

1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Q2 P

文件:555.77 Kbytes 页数:12 Pages

TOSHIBA

东芝

SSM6L820R

Small-signal MOSFET 2 in 1

Application Scope:Power Management Switches\nPolarity:N-ch + P-ch\nGeneration:U-MOSⅦ-H / U-MOSⅥ\nInternal Connection:Independent\nAEC-Q101:Qualified(*)\nRoHS Compatible Product(s) (#):Available\nAssembly bases:泰国 Drain-Source voltage (Q1) VDSS 30 V \nGate-Source voltage (Q1) VGSS -8/+12 V \nDrain current (Q1) ID 4 A \nDrain-Source voltage (Q2) VDSS -20 V \nGate-Source voltage (Q2) VGSS -12/+6 V \nDrain current (Q2) ID -4 A \nPower Dissipation PD 1.4 W ;

Toshiba

东芝

技术参数

  • Life-cycle:

    新产品

  • Polality:

    N-ch + P-ch

  • VDSS(V):

    30/-20

  • VGSS(V):

    -8/+12

  • ID:

    Q1(A)

  • ID:

    Q2(A)

  • PD(W):

    1.4

  • Ciss:

    Q1(pF)Typ.

  • Ciss:

    Q2(pF)Typ.

  • Qg:

    Q1(nC)Typ.

  • Qg:

    Q2(nC)Typ.

  • RDS(ON):

    Q1(Ω)VGS=2.5VMax

  • RDS(ON):

    Q1(Ω)VGS=4.5VMax

  • RDS(ON):

    Q2(Ω)VGS=-2.5VMax

  • RDS(ON):

    Q2(Ω)VGS=-4.5VMax

  • RDS(ON):

    Q2(Ω)VGS=-10VMax

  • Number of pins:

    6

  • Surface mount package:

    Y

  • Package name(Toshiba):

    TSOP6F

  • AEC-Q101:

    Qualified(*)

  • Generation:

    U-MOSⅦ-H/U-MOSⅥ

  • Width×Length×Height(mm):

    2.9 x 2.8 x 0.8

  • Package Size(mm2):

    8.12

  • Drive voltage type:

    Low Voltage Gate Drive

供应商型号品牌批号封装库存备注价格
NK/南科功率
2025+
TSOP6F
986966
国产
询价
TOSHIBA/东芝
2511
TSOP-6
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
TOSHIBA(东芝)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
询价
TOSHIBA
22+
SMD
3000
询价
TOSHIBA
10
询价
24+
N/A
57000
一级代理-主营优势-实惠价格-不悔选择
询价
Toshiba Semiconductor and Stor
25+
6-SMD 扁平引线
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
TOSHIBA
24+
con
10000
查现货到京北通宇商城
询价
TOSHIBA/东芝
23+
SMD
50000
全新原装正品现货,支持订货
询价
TOSHIBA/东芝
24+
NA/
13250
原厂直销,现货供应,账期支持!
询价
更多SSM6L820R供应商 更新时间2025-10-11 14:01:00