丝印：KFT；Package：TSOP6F；MOSFETs Silicon N-channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Note 1) (2) 175 ℃ MOSFET (3) 4.5-V drive (4) Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V)

文件：249.69 Kbytes 页数：8 Pages

TOSHIBA

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丝印：KFT；Package：TSOP6F；Power Management Switches DC-DC Converters

文件：264.48 Kbytes 页数：8 Pages

TOSHIBA

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MOSFETs Silicon N-channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Note 1) (2) 175 ℃ MOSFET (3) 4.5-V drive (4) Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V)

文件：249.69 Kbytes 页数：8 Pages

TOSHIBA

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Small Low ON resistance MOSFETs

Application Scope：DC-DC Converters / Power Management Switches\nFeature：Low drain-source on-resistance\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nInternal Connection：Single\nAEC-Q101：Qualified(*)\nRoHS Compatible Product(s) (#)：Available Drain-Source voltage VDSS 100 V \nGate-Source voltage VGSS +/-20 V \nDrain current ID 3.5 A \nPower Dissipation PD 1.5 W ;

Toshiba

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