丝印：KFP；Package：SOT-23F；MOSFETs Silicon N-Channel MOS

Applications • Relay Drivers Features (1) AEC-Q101 Qualified (Note1). (2) 4.0-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 200 mΩ (max) (@VGS = 4.0 V, ID = 1.0 A) RDS(ON) = 176 mΩ (max) (@VGS = 4.5 V, ID = 2.0 A) RDS(ON) = 150 mΩ (max) (@VGS = 10 V, ID = 2.0 A)

文件：266.07 Kbytes 页数：9 Pages

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MOSFETs Silicon N-Channel MOS

文件：277.5 Kbytes 页数：9 Pages

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MOSFETs Silicon N-Channel MOS

Applications • Relay Drivers Features (1) AEC-Q101 Qualified (Note1). (2) 4.0-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 200 mΩ (max) (@VGS = 4.0 V, ID = 1.0 A) RDS(ON) = 176 mΩ (max) (@VGS = 4.5 V, ID = 2.0 A) RDS(ON) = 150 mΩ (max) (@VGS = 10 V, ID = 2.0 A)

文件：266.07 Kbytes 页数：9 Pages

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Small Low ON resistance MOSFETs

Feature：Active clamp\nPolarity：N-ch\nGeneration：U-MOSⅣ\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain current ID 2 A \nPower Dissipation PD 1 W \nDrain-Source voltage VDSS 38 V \nGate-Source voltage VGSS +/-20 V ;

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