High Speed Switching Applications

文件：126 Kbytes 页数：5 Pages

TOSHIBA

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High Speed Switching Applications

文件：126 Kbytes 页数：5 Pages

TOSHIBA

东芝

Small Low ON resistance MOSFETs

Polarity：N-ch\nGeneration：π-MOSⅥ\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current ID 0.1 A \nPower Dissipation PD 0.2 W \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

Small Low ON resistance MOSFETs

Polarity：N-ch\nGeneration：π-MOSⅥ\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current ID 0.1 A \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

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Small-signal MOSFET

Polarity：N-ch\nGeneration：π-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current ID 0.1 A \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝