Small Low ON resistance MOSFETs

Polarity：P-ch\nGeneration：U-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain current ID -0.25 A \nPower Dissipation PD 0.5 W \nDrain-Source voltage VDSS -20 V \nGate-Source voltage VGSS +/-10 V ;

Toshiba

东芝

丝印：B；Package：CST3C；MOSFETs Silicon P-Channel MOS

文件：227.72 Kbytes 页数：8 Pages

TOSHIBA

东芝

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type

文件：430.52 Kbytes 页数：5 Pages

TOSHIBA

东芝

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type

○ High-Speed Switching Applications ○ Analog Switch Applications • 1.2 V drive • Low ON-resistance : Ron = 44 Ω (max) (@VGS = -1.2 V) : Ron = 22 Ω (max) (@VGS = -1.5 V) : Ron = 11 Ω (max) (@VGS = -2.5 V)

文件：256.44 Kbytes 页数：5 Pages

TOSHIBA

东芝

6 x 6 mm Washable Tactile Switches

文件：221.96 Kbytes 页数：1 Pages

GREATECS