TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS??

○ Power Management Switch Applications • 1.5 V drive • Low ON-resistance: RDS(ON) = 260 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 180 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 132 mΩ (max) (@VGS = -2.5 V)

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TOSHIBA

东芝

丝印：JJN；Package：SOT-323；P-Channel MOSFET

■ Features ● VDS (V) = -20 V ● ID = -3.0 A ● 1.5 V drive ● Low ON-resistance: RDS(ON) = 260 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 180 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 132 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V)

文件：522.4 Kbytes 页数：5 Pages

KEXIN

科信电子

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

文件：214.28 Kbytes 页数：6 Pages

TOSHIBA

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Small Low ON resistance MOSFETs

Polarity：P-ch\nGeneration：U-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current ID -3 A \nPower Dissipation PD 0.5 W \nDrain-Source voltage VDSS -20 V \nGate-Source voltage VGSS +/-8 V ;

Toshiba

东芝