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1N60

N-Channel650V(D-S)MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

1N60

1.2A,600VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

1N60

N-ChannelPowerMOSFET

DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,PWMmotorcontrols,bridgecircuitsandgeneralpurposeswitchingapplications. TheNell1N60isathree-terminalsilicondevicewithcurrentconductioncapabilityof1.2A,fastswitc

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

1N60

SmallSignalSchottkyDiodes

VOLTAGERANGE:40V CURRENT:0.03A DO-35(GLASS) FEATURES Metalsilliconjunctionmajoritycarrierconduction Highcurrentcapability,lowforwardvoltagedrop ExtremelylowreversecurrentIR Ultraspeedswitchingcharacteristics Smalltemperaturecoefficientofforward

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

1N60

FastSwitching

•DESCRITION •Designedforhighefficiencyswitchmodepowersupply. •FEATURES •DrainCurrent–ID=1A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=8Ω(Max) •AvalancheEnergySpecified •FastSwitching •SimpleDriveRequireme

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

1N60

SMALLSIGNALSCHOTTKYDIODE

FEATURES ◇Metalsiliconjunctionmajoritycarrierconduction ◇Highcurrentcapability,lowforwardvoltagedrop ◇ExtremelylowreversecurrentIR ◇Ultraspeedswitchingcharacteristics ◇Smalltemperaturecoefficientofforwardcharacteristics ◇Satisfactorywavedetectionefficiency ◇F

DSK

Diode Semiconductor Korea

1N60

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Metal-on-siliconjunction,majoritycarrierconduction •Highcurrentcapability,Lowforwardvoltagedrop •ExtremelylowreversecurrentIR •Ultraspeedswitchingcharacteristics •Smalltemperaturecoefficientofforwardcharacteristics •Satisfactorywavedetectionefficiency

GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd

星合明辉电子山东星合明辉电子有限公司

1N60

SmallSignalSchottkyDiodes

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

1N60

SMALLSIGNALSCHOTTKYDIODES

SHUNYEShunye Enterprise

顺烨电子江苏顺烨电子有限公司

1N60

SMALLSIGNALSCHOTTKYDIODES

JINGHENG

Jinan Jing Heng Electronics Co., Ltd.

1N60

N-CHANNELMOSFET

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

1N60

HermeticallySealedGlassCasePointContactGermaniumDiode

PRODUCTFEATURE 1N60isapointcontactdiodeemployingN-fromGermaniumandgivesanefficientandexcellentlinearitywhenusedinTVimagedetection,FMdetection,radio,AMdetection,etc.

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

1N60A

0.5A,600VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

1N60A

DrainCurrentID=1.0A@TC=25C

•FEATURES •DrainCurrentID=1.0A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=12Ω(Max) •FastSwitching •APPLICATIONS •Switchingapplicationsinpowersupplies •Motorcontrols,highefficientDCtoDCconverters

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

1N60A

1A600VN-channelenhancedfieldeffecttransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

1N60A

GOLDBONDEDDIODES

[VMI] 200V-1,000VSinglePhaseBridge 22.0A-25.0AForwardCurrent 70ns-3000nsRecoveryTime

ETCList of Unclassifed Manufacturers

未分类制造商

1N60A

0.5Amps,600/650VoltsN-CHANNELMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

1N60A

0.5Amps,600VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC1N60AisahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowe

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

1N60A

OptimizedforRadioFrequencyResponse

OptimizedforRadioFrequencyResponse CanbeusedinmanyAM,FMandTV-IFapplications,replacingpointcontactdevices. Features ●Lowerleakagecurrent ●Flatjunctioncapacitance ●Highmechanicalstrength ●Atleast1millionhoursMTBF ●BKCsSigma-Bond™platingforproblemfreesold

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N60C

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

详细参数

  • 型号:

    SSI1N60B

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    600V N-Channel MOSFET

供应商型号品牌批号封装库存备注价格
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHILD/仙童
TO-262
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
23+
N/A
36100
正品授权货源可靠
询价
Secos
20+
SOT-563
36800
原装优势主营型号-可开原型号增税票
询价
S
21+
SOT-563
35099
询价
VB
21+
SOT-563
10000
原装现货假一罚十
询价
VBSEMI
19+
SOT-563
29600
绝对原装现货,价格优势!
询价
SSI
24
公司优势库存 热卖中!!
询价
2017+
DIP22L
24589
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
SST
23+
CDIP22
8650
受权代理!全新原装现货特价热卖!
询价
更多SSI1N60B供应商 更新时间2024-5-15 10:30:00