30V N-Channel MOSFET

DESCRIPTION The SSF3610 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = 30V,ID =11A RDS(ON)

文件：728.12 Kbytes 页数：6 Pages

Good-Ark

固锝电子

PWM applications

DESCRIPTION The SSF3610 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = 30V,ID =11A RDS(ON)

文件：404.76 Kbytes 页数：7 Pages

SILIKRON

新硅能微电子

MOSFET

Silikron

新硅能微电子

25V N-Chanel MOSFET

Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide va

文件：908.37 Kbytes 页数：6 Pages

Good-Ark

固锝电子

Advanced MOSFET process technology

Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide v

文件：583.98 Kbytes 页数：7 Pages

SILIKRON

新硅能微电子

30V N-Channel MOSFET

文件：728.12 Kbytes 页数：6 Pages

Good-Ark

固锝电子

25V N-Chanel MOSFET

文件：908.37 Kbytes 页数：6 Pages

Good-Ark

固锝电子

MOSFET

Silikron

新硅能微电子