丝印：1HE；Package：SOT-23；General Purpose Transistors NPN Silicon

FEATURES ● High current capacity in compact package. IC =1.5 A. ● Epitaxial planar type. ● NPN complement: L8050H ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capabl

文件：803.76 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：1HG；Package：SOT-23；General Purpose Transistors NPN Silicon

FEATURES ● High current capacity in compact package. IC =1.5 A. ● Epitaxial planar type. ● NPN complement: L8050H ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capabl

文件：803.76 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：1HG；Package：SOT-23；General Purpose Transistors NPN Silicon

FEATURES ● High current capacity in compact package. IC =1.5 A. ● Epitaxial planar type. ● NPN complement: L8050H ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capabl

文件：803.76 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：Y1；Package：SOT-23；NPN Transistors

NPN Transistors Features ● Collector Current: IC=1.5A

文件：450.53 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：Y1；Package：SOT-23；NPN Transistors

NPN Transistors Features ● Collector Current: IC=1.5A

文件：450.53 Kbytes 页数：3 Pages

YFWDIODE

佑风微

General Purpose Transistors

Features - Epoxy meets UL-94 V-0 flammability rating. - High conductance. - Surface mount package ideally suited for automatic insertion.

文件：567.01 Kbytes 页数：5 Pages

COMCHIP

典琦

NPN General Purpose Transistors

NPN General Purpose Transistors Pb Lead(Pb)-Free

文件：403.69 Kbytes 页数：4 Pages

WEITRON

TRANSISTOR竊?NPN 竊

TRANSISTOR（NPN） FEATURES Power dissipation PCM : 0.3 W（ Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

文件：131.7 Kbytes 页数：2 Pages

JIANGSU

长电科技

TRANSISTOR竊?NPN 竊

TRANSISTOR（NPN） FEATURES Power dissipation PCM : 0.3 W（ Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

文件：131.7 Kbytes 页数：2 Pages

JIANGSU

长电科技

NPN Silicon General Purpose Transistor

FEATURES Power dissipation PCM : 1 W Collector Current ICM : 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating & storage junction temperature Tj, Tstg : - 55°C ~ + 150°C

文件：110.72 Kbytes 页数：2 Pages

SECOS

喜可士