丝印：SS115；Package：DO-214AA；SMD Schottky Barrier Rectifiers

Features - Metal silicon junction, majority carrier conduction. - For surface mounted applications. - Low power loss, high efficiency. - For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. - High forward surge current capability.

文件：470.87 Kbytes 页数：4 Pages

COMCHIP

典琦

Standard Schottky

Comchip

典琦

POWER TRANSISTORS(2.0A,60-100V,50W)

文件：146.97 Kbytes 页数：3 Pages

MOSPEC

统懋

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

文件：269.51 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Plastic Medium-Power Complementary Silicon Transistors

Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min)

文件：269.51 Kbytes 页数：6 Pages

ONSEMI

安森美半导体