丝印：SS；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

文件：692.73 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：SS；Package：SOT23；45 V, 100 mA PNP general-purpose transistors

Features * General-purpose transistors * Two current gain selections * AEC-Q101 qualified * Small SMD plastic package

文件：614.42 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：SS；Package：SOT23；45 V, 100 mA PNP general-purpose transistors

Features * General-purpose transistors * Two current gain selections * AEC-Q101 qualified * Small SMD plastic package

文件：614.42 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：SS；Package：SOT-23；N-Channel MOSFET

Features ● VDS(V)=50V ● ID=300mA(VGS=10V) ● RDS(ON)

文件：1.48102 Mbytes 页数：4 Pages

UMW

友台半导体

丝印：SS；Package：SOT-23；N-Channel 50-V(D-S) MOSFET

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible

文件：898.67 Kbytes 页数：5 Pages

SY

顺烨电子

丝印：SS；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 50V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：609.07 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

丝印：SS；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

Features High density cell design for extremely low Rpson) Rugged and Relaible

文件：1.27011 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：SS；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • The BSS138Q is suitable for automotive

文件：92.3 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：SS；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for High Reliability

文件：139.53 Kbytes 页数：4 Pages

DIODES

美台半导体

丝印：SS；Package：SOT-23；N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These prod

文件：125.66 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司