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SS12

丝印:SS12;Package:SMA(DO-214AC);1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

FEATURES * Ideal for surface mounted applications * Low leakage current * Metallurgically bonded construction * High reliability * RoHS product for packing code suffix G Halogen free product for packing code suffix H * Moisture Sensitivity Level 1

文件:550.44 Kbytes 页数:2 Pages

PACELEADERPACELEADER INDUSTRIAL

霈峰霈峰实业有限公司

SS12

丝印:SS12;Package:SMA;Schottky Rectifier

Description The SS12−S100 series includes high−efficiency, low power loss, general−propose schottky rectifiers. The clip−bonded leg structure provides high thermal performance and low electrical resistance. These rectifiers are suited for free wheeling, secondary rectification, and reverse po

文件:131.63 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

SS12G

丝印:SS12;Package:SMA;Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件:2.25902 Mbytes 页数:4 Pages

UNSEMI

优恩半导体

SS12GF

丝印:SS12;Package:SMAF;Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件:2.34587 Mbytes 页数:4 Pages

UNSEMI

优恩半导体

SS12T3

丝印:SS12;Package:SMB;Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

文件:115.51 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

SS12T3

丝印:SS12;Package:SMB;Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for

文件:63.45 Kbytes 页数:4 Pages

ONSEMI

安森美半导体

SS12T3

丝印:SS12;Package:SMB;Surface Mount Schottky Power Rectifier

Description The SS12−S100 series includes high−efficiency, low power loss, general−propose schottky rectifiers. The clip −bonded leg structure provides high thermal performance and low electrical resistance. These rectifiers are suited for free wheeling, secondary rectification, and reverse polar

文件:64.31 Kbytes 页数:4 Pages

ONSEMI

安森美半导体

SS12T3

丝印:SS12;Package:SMB;Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

文件:58.16 Kbytes 页数:4 Pages

ONSEMI

安森美半导体

ECCSR120L1HR

丝印:SS12;Package:SMA;1.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V

文件:307.38 Kbytes 页数:5 Pages

E-CMOS

飞虹高科

ECCSR120L1R

丝印:SS12;Package:SMA;1.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V

文件:307.38 Kbytes 页数:5 Pages

E-CMOS

飞虹高科

详细参数

  • 型号:

    SS12

  • 功能描述:

    DIODE SCHOTTKY POWER 1A 20V SMA

  • RoHS:

  • 类别:

    分离式半导体产品 >> 单二极管/整流器

  • 系列:

    -

  • 标准包装:

    100

  • 二极管类型:

    标准 电压

  • -(Vr)(最大):

    50V 电流 -

  • 平均整流(Io):

    6A 电压 - 在 If

  • 时为正向(Vf)(最大):

    1.4V @ 6A

  • 速度:

    快速恢复 = 200mA(Io)

  • 反向恢复时间(trr):

    300ns 电流 - 在 Vr

  • 时反向漏电:

    15µA @ 50V 电容@ Vr,

  • F:

    -

  • 安装类型:

    底座,接线柱安装

  • 封装/外壳:

    DO-203AA,DO-4,接线柱

  • 供应商设备封装:

    DO-203AA

  • 包装:

    散装

  • 其它名称:

    *1N3879

供应商型号品牌批号封装库存备注价格
ONSEMI
16+
NA
8800
原装现货,货真价优
询价
2022+
5000
原厂代理 终端免费提供样品
询价
ON Semi
0536
3195
优势货源原装正品
询价
ON Semi
23+
N/A
3195
全新原装正品现货,支持订货
询价
onsemi
25+
SMA
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
ON
2005
SMADO-214AC
12000
询价
ONSEMI/安森美
24+
SMADO-214AC
60000
询价
ON/安森美
25+
电联咨询
7800
公司现货,提供拆样技术支持
询价
ON
08+
DO-214AC
100000
绝对全新原装强调只做全新原装现
询价
ON(安森美)
2019+ROHS
DO-214AA(SMB)
66688
森美特高品质产品原装正品免费送样
询价
更多SS12供应商 更新时间2025-9-8 10:02:00