SGT

SALLTECH

萨瑞微电子

Single N-Channel Enhancement Mode MOSFET

Feature Pin Description  60V/60A RDS(ON)= 7.7 mΩ(typ.)@VGS = 10V RDS(ON)= 11.8 mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available (RoHS Compliant) Applications  High Frequency Point-of-Load Synchronous Buck Converter  Power Tool A

文件：923.96 Kbytes 页数：9 Pages

CHIPSOURCETEK

矽源特科技

N-Channel Enhancement Mode Power MOSFET

Description The GT090N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：692.97 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT090N06MH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.07666 Mbytes 页数：6 Pages

GOFORD

谷峰半导体