Single N-Channel Enhancement Mode MOSFET

Feature Pin Description  60V/60A RDS(ON)= 7.7 mΩ(typ.)@VGS = 10V RDS(ON)= 11.8 mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available (RoHS Compliant) Applications  High Frequency Point-of-Load Synchronous Buck Converter  Power Tool A

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CHIPSOURCETEK

矽源特科技

N-Channel Enhancement Mode Power MOSFET

Description The GT090N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

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GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT090N06MH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

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GOFORD

谷峰半导体

60V N-Ch Power MOSFET

Feature ◇High Speed Power Switching, Logic Level ◇Enhanced Body diode dv/dtcapability ◇EnhancedAvalanche Ruggedness ◇100% UIS Tested, 100% Rg Tested ◇Lead Free, HalogenFree Application ◇Synchronous Rectification in SMPS ◇Hard Switching and High Speed Circuit ◇DC/DCin Telecoms and

文件：805.9 Kbytes 页数：6 Pages

HUNTECK

恒泰柯半导体