Schottky Barrier Rectifier

Schottky Barrier Rectifier Features -Axial lead type devices for through hole design. -Low power loss, high efficiency . -High current capability , Low forward voltage drop. -High surge capability . -Guardring for overvoltage protection. -Ultra high-speed switching. -Sili

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COMCHIP

典琦

Schottky Barrier Rectifiers Diodes

Comchip

典琦

High Efficiency LED, 5 mm Tinted Non-Diffused Package

文件：130.169 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Speed IR Emitting Diode in ø5 mm (T–13/4) Package

DESCRIPTION TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1 3/4 • Dimensions (in mm): Ø 5 • Leads with stand-off •

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VISHAYVishay Siliconix

威世威世科技公司

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Description TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic package. The new technology combines the high speed of DHGaAlAs with the efficiency of standard GaAlAs and the low forward vo

文件：142.84 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司