Water-proof Type

文件：1.15505 Mbytes 页数：7 Pages

ALPS

阿尔卑斯

1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module

The HYM 321000S/GS-50/-60 is a 4 MByte DRAM module organized as 1 048 576 words by 32- bit in a 72-pin single-in-line package comprising two HYB 5118160BSJ 1M × 16 DRAMs in 400 mil wide SOJ-packages mounted together with two 0.2 µF ceramic decoupling capacitors on a PC board. Advanced Information

文件：80.36 Kbytes 页数：10 Pages

SIEMENS

西门子

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

DESCRIPTION NECs NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility. Its excellent low noise figure and high associated gain make it suitable for commercial, industrial and space applications. NECs stringe

文件：141.29 Kbytes 页数：6 Pages

CEL

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

文件：135.99 Kbytes 页数：6 Pages

CEL