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20N60C3

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

20N60C3

45A,600V,UFSSeriesN-ChannelIGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately

Intersil

Intersil Corporation

G20N60C3

45A,600V,UFSSeriesN-ChannelIGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG20N60C3

45A,600V,UFSSeriesN-ChannelIGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG20N60C3

45A,600V,UFSSeriesN-ChannelIGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately

Intersil

Intersil Corporation

HGTG20N60C3

45A,600V,UFSSeriesN-ChannelIGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG20N60C3D

45A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate

Intersil

Intersil Corporation

HGTG20N60C3D

45A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG20N60C3R

40A,600V,RuggedUFSSeriesN-ChannelIGBTs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTP20N60C3

45A,600V,UFSSeriesN-ChannelIGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

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