Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：371.24 Kbytes 页数：11 Pages

Infineon

英飞凌

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：1.00191 Mbytes 页数：11 Pages

Infineon

英飞凌

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：371.24 Kbytes 页数：11 Pages

Infineon

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7\n 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

Infineon

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

·Innovative high voltage technology\n ·Worldwide best R DS(on) in TO-251 and TO-252\n ·Ultra low gate charge\n ·Periodic avalanche rated\n ·Extreme dv/dt rated\n ·Ultra low effective capacitances\n ·Improved transconductance;

Infineon

英飞凌