Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

文件：323.85 Kbytes 页数：11 Pages

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N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.95Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device per

文件：338.5 Kbytes 页数：2 Pages

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无锡固电

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：371.24 Kbytes 页数：11 Pages

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英飞凌

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：1.00191 Mbytes 页数：11 Pages

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英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

·Innovative high voltage technology\n ·Worldwide best R DS(on) in TO-251 and TO-252\n ·Ultra low gate charge\n ·Periodic avalanche rated\n ·Extreme dv/dt rated\n ·Ultra low effective capacitances\n ·Improved transconductance;

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英飞凌

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：1.00191 Mbytes 页数：11 Pages

Infineon

英飞凌

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：371.24 Kbytes 页数：11 Pages

Infineon

英飞凌