Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

文件：164.27 Kbytes 页数：14 Pages

Infineon

英飞凌

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.09082 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：304.59 Kbytes 页数：14 Pages

Infineon

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

文件：323.85 Kbytes 页数：11 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.95Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device per

文件：338.5 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

文件：339.31 Kbytes 页数：2 Pages

ISC

无锡固电

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：594.28 Kbytes 页数：14 Pages

Infineon

英飞凌

N-Channel 650 V (D-S) MOSFET

文件：1.09069 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：594.28 Kbytes 页数：14 Pages

Infineon

英飞凌

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：1.00191 Mbytes 页数：11 Pages

Infineon

英飞凌